Epitaxial growth of Ru2Si3 films on Si(100) and Si(111) by molecular beam epitaxy (MBE) has been investigated. Films with thicknesses of approximate to 100 nm were grown by the so-called template technique. In a first step, a thin Ru film(approximate to 1 nm) was deposited at low temperatures. In situ annealing lead to the formation of a Ru,Si, film that served as a template for a thicker him grown subsequently by co-evaporation of Ru and Si. The Ru/Si ratio and the growth temperature during the co-evaporation turned out to be of particular importance. Best films showed He ion channeling minimum yield values of approximate to 5%. The films consist of epitaxially oriented grains with dimensions up to 1 mu m after rapid thermal annealing.