Based on the study of the single-barrier metal/insulator/metal junction, a new structure of the Al/Al2O3/Al/Al2O3/Au tunnel junction with double-barrier was fabricated successfully. The light-emission properties of this junction, such as homogeneity and quantum efficiency (10(-5)), were all better than those of the single-barrier junction. The emission peak (460 nm, 2.74 eV) of this junction had a 'blue shift' compared with that of the single barrier Al/Al2O3/Au junction (630 nm, 3.0 eV). Moreover, we firstly observed a strong negative resistance phenomenon (NRP) in the I-V curve of the double-barrier junction and found that the NRP was closely associated with the light emission.