Highly (100)-oriented LaNiO3 (LNO) films directly on Si substrates were prepared by a simple chemical solution technique using lanthanum nitrate and nickel acetate as the start material sources. Highly (100)-oriented PbZr0.30Ti0.70O3 (PZT30/70) thin film was fabricated subsequently on the LNO-coated Si substrates using a modified sol-gel method. The orientation of the PZT and LNO thin films was characterized by X-ray diffraction (XRD). The resistivity of the: LNO thin film at room temperature (300 K) is 7.6 x 10(-4) Omega cm. The remmant polarization (P-r) and coercive field (E-c) of the Pt/PZT/LNO/Si capacitor were 10.5-16.8 mu C/cm(2) and 20.5-31.6 kV/cm with the variation of electric field (100-200 kV/cm). The values of dielectric constant and dissipation factor of 10 kHz were 700 and 0.019, respectively. After 10(8) switching cycles, the net-switched polarization values of the capacitor drop to 95, 62, and 37% of their initial values under different electric fields ranging from 100 to 200 kV/cm, respectively.