In this work the possibilities of using the induced PN junction as a photon detector in the Al/silicon rich oxide/Si devices is investigated. The devices were fabricated on high resistivity silicon substrates, the chemical vapor deposition (CVD) silicon rich oxide reactive gases ratio used was 20. Experimental results show that this device is sensitive to visible light, and that is possible, in a controlled and simple manner, to use the PN-induced junction as a detector.