Electrical conductive hard-carbon (diamond-like carbon, DLC) films were formed using a supermagnetron plasma chemical vapor deposition (CVD) method. Using a mixture of i-C4H10 and N-2 gases, DLC films were deposited on thermally oxidized Si wafers, and the film deposition rate, hardness, and resistivity were measured. Two rf powers of the same frequency (13.56 MHz) with a rf phase difference of 180 degrees were supplied to each electrode. The lowest resistivity of 1.7 x 10(3) Omega cm was observed at a N-2 concentration of 70%, at a gas pressure of 50 mtorr, an electrode temperature of 80 degreesC, and at rf powers of 900 W/900 W. In this case, measured film deposition rate and hardness were 2300 Angstrom /min and 1700 kg/mm(2), respectively.