The effects of growth temperature on the microstructure and electrical barrier height of the PtSi Schottky barrier detector (SBD) have been investigated. PtSi films, 4 nm in thickness were deposited at various temperatures ranging from 350 to 550 degreesC. The electron diffraction patterns showed that PtSi film formed at 350 degreesC depicts an intermingling of both (1 (1) over bar1) and (1 (2) over bar1) orientations. However, only (1 (2) over bar1) orientation was shown when the PtSi films were formed above 450 degreesC. Moreover, SBD formed at 350 degreesC was found to depict an electrical barrier that is approximately 0.02 eV higher than those formed above 450 degreesC. Although the microstructure and the electrical barrier height of the PtSi film do not change when the formation temperature was further increased from 450 to 550 degreesC. Nevertheless, the higher formation temperature resulted in a larger grain size, indicating that grain size alone does not affect the barrier height of the resultant SBD.