Chromium layers 800 Angstrom thick are deposited by electron gun evaporation on: respectively, non-implanted, 5 x 10(14) and 5 x 10(15) at./cm(2) P+-implanted Si(111) substrates. The redistribution of phosphorus and the influence on chromium silicide growth are analyzed by secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectroscopy (RBS) after annealing between 450 degrees and 550 degreesC. It is shown that chromium silicide formation is retarded or inhibited by the presence of phosphorus. The implant diffuses out of the CrSi2 surface layer in both implantation cases, but also accumulates at the CrSi2/Si interface in the case of the higher dose.