Thin film field-effect transistors based on solution processed CdS have been prepared. Mobilities in the range of 5 to 9 cm(2)/Vs and on/off-current ratios exceeding 10(6) are demonstrated. The device performance can be significantly enhanced by annealing in nitrogen resulting in mobilities as high as 45 cm(2)/Vs. The increase in mobility is ascribed to a reduction of trapping states at the grain boundaries of the CdS thin film, presumably desorption of oxygen or water. Solution processing (chemical bath deposition) of inorganic semiconductors might offer a path for low-cost, large-area microelectronic devices.