The deposition of stoichiometric aluminum oxide films by off-plane double bend filtered cathodic vacuum are (FCVA) is first reported. A novel method for introducing a reactive gas such as oxygen into the deposition chamber is presented. As a result, high deposition rate was made possible by this FCVA technique. Stoichiometric aluminum oxide films were deposited successfully under varying are current and oxygen partial pressure. In general, a higher partial pressure is needed at higher are current in order to maintain stoichiometric composition. The utilization efficiency of the aluminum target was also studied.