The production technique of thin film is described by using sheet-shaped electron cyclotron resonance heating (ECRH) plasma supplemented with RF plasma source for controlling the plasma parameters. The deposition rate of thin film onto the substrate can be varied from 6 to 102 nm/min depending on the experimental conditions. The thin film is almost uniformly formed over the wide range of plasma parameters. The present experimental technique can be applied to the plasma source for material processing such as thin film, semiconductor devices, and so on.