CuInSe2 layers have been prepared by direct electrodeposition onto Mo-coated glass substrates, being the overall film composition adjusted by the substrate polarization potential. The structure and composition of these samples have been investigated by XRD, EDX and XPS for the films as-grown and after heating with Se vapor. The obtained data reveal the importance of oxygen interaction with CuInSe2 layers at temperatures above 400 degreesC, by resulting in a crystalline In2O3 phase which remains in the film near-surface region and a poor crystalline Cu,Se which migrates towards the bulk. Such components redistribution allows overall stoichiometric layers to approach the characteristics of global Cu-rich ones and achieve the highest CuInSe2 recrystallization.