Blue, green, yellow and red electroluminescence (EL) from the semitransparent Au/native silicon oxide (NSO)/p-Si structure was observed. The p-Si wafers with NSO films were subjected to rapid thermal annealing (RTA) at a series of temperatures between 600 and 1000 degreesC and then the semitransparent Au/NSO/p-Si structure was made. Under forward biases over 3 V, strong EL could be observed. The effect of RTA temperature on EL spectra of the semitransparent Au/NSO/p-Si structure was studied. It was found that with increasing RTA temperature from 600 to 900 degreesC, wavelength of the main EL peak varied between 460 and 680 nm and intensity of the main EL peak increased monotonously.