Intense ultraviolet (W) photoluminescence (PL) was observed at room temperature from amorphous Si:O:C films synthesized at 200, 300, 400 degreesC by the liquid-solution-phase (LSP) method. The intensity was as strong as that of visible emission band from porous silicon. In all the films, a band existed, centered at 340 mn, while a shoulder band centered at 380 nm was observed from the films deposited at 400 degreesC. By analyzing the PL and photoluminescence excitation (PLE) spectra, Fourier-transform infrared (FTIR) absorption, X-ray photoelectronic spectroscopy (XPS) and X-ray diffraction (XRD), we suggest that the photoluminescence peak at 340 nm originates from the defects in silicon oxide network, while the peak at 380 nm may be related to Si-C and Si-Si bonds in the samples.