Thin Solid Films, Vol.392, No.1, 128-133, 2001
Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties
Bi2WO6 films were deposited by metalorganic chemical vapor deposition for the first time. The perfect epitaxially grown (001)-oriented films were deposited on (100)LaAlO3, (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates at 500 degreesC. However, the perfect (001)-oriented film was not deposited on a (100)CaRuO3//(100)SrTiO3 substrate when the deposition temperature decreased to 400 degreesC. Ferroelectricity was observed only for the film deposited on the (100)CaRuO3//(100)SrTiO3 substrate at 600 degreesC. The doubled remanent polarization and the coercive field of the film were 0.17 muC/cm(2) and 7.0 kV/cm, respectively.