화학공학소재연구정보센터
Thin Solid Films, Vol.392, No.2, 191-195, 2001
High rate deposition of TiO2 and SiO2 films by radical beam assisted deposition (RBAD)
Radical beam assisted deposition (RBAD) is an advanced and attractive technique compared with the conventional vacuum evaporation process. In this study, TiO2 and SiO2 films were deposited from Ti and Si metals onto glass substrate by READ. Atomic oxygen radicals were produced by a beam source using a RF plasma tube. The atomic oxygen radical beam flux (AORBF) density could be achieved to be more than 1 x 10(15) (atom cm(-2) s(-1)). The refractive indices n of the TiO2 films were higher than 2.35, and the extinction coefficients k were lower than 3 x 10(-3) at the deposition rate of 1.8 nm s(-1) when the AORBF density was 8.4 X 10(15) (atom cm(-2) s(-1)). For the SiO2 film, n was 1.48, and k was lower than 1.5 x 10(-3) at the deposition rate of 2.4 nm s(-1). Moreover, n of the TiO2 films could be increased to 2.50 by adding an ion beam flux to the radical beam flux. From these results, it is confirmed that TiO2 and SiO2 films deposited by READ have good optical properties even at higher deposition rates.