Conductive thin films of a bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) salt have been constructed by a successive dry-wet process, which is a combination of the ultra-high vacuum (UHV) deposition of neutral BEDT-TTF molecules and an electrochemical doping process that utilizes an aqueous solution of LiClO4 as the electrolyte. The optimal temperature of the BEDT-TTF deposition source is 80 degreesC, which gives a uniform coverage of the substrate without any decomposition. The doping starts at the electrode/film. interface, proceeds outwards from the interface and is completed after 5-7 h between the electrode gaps. The change in the surface plasmon resonance spectroscopy (SPRS) curve upon doping is best fitted by varying the dielectric constant of the BEDT-TTF film while keeping the thickness of the film constant. The conductivity of the doped BEDT-TTF film along the film plane was in the range 10(-3)-10(-4) S cm(-1).