We have. synthesized amorphous Ti3Si1O8 films 220 am thick by rf sputtering of a Ti3Si target with a mixed argon-oxygen gas. The composition and structure of the films, as-deposited and upon thermal annealing in vacuum, was monitored by 2 MeV He-4(2+) backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. We contrast these results against those obtained for TiO2 films 100 and 300 nm thick obtained by the same deposition process from a titanium target. The results confirm earlier reports that show that the incorporation of SiO2, in a TiO2 film raises the crystallization temperature. We point out that Ti-Si-O films share this phenomenon with other ternary films. They form a particular class of materials, the mictamict compounds, of which Ti-Si-O films are but one member.