P-type polycrystalline silicon (poly-Si) thin films are fabricated from SiF4, H-2 and SiH4 gas mixtures by plasma-enhanced chemical vapor deposition using in situ doping of B2H6 or BF3. Relationships between deposition condition, film structure and transport properties are focused on. In addition, ionization efficiency is discussed in connection with deposition condition and with B and F concentrations. When poly-Si is doped with B, crystal fractions are lower for 300 degreesC-grown films than for 200 degreesC-grown films. High B doping results in (220) preferential orientation even when no fluorinated gas is used in the gas source. These trends are very similar among films prepared using different doping sources, i.e. B2H6 and BF3. When SiF4 is used, the B ionization efficiency is very low, similar to 10%. It is improved to similar to 50% by removing SiF4 from the gas source. This low ionization efficiency shows good correlation with atomic concentration ratio of B/F in the poly-Si films, suggesting that some high. incorporation of F compared to B inhibits the ionization of B. Using SiH4, H-2 and BF3 without SiF4, highly (220) oriented, large grain poly-Si is obtained and it exhibits large mobility of 3.7 cm(2)/Vs.