Thin Solid Films, Vol.395, No.1-2, 280-283, 2001
Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperature
A low-temperature process for preparing low-k silicon nitride (SiN) has been successfully developed using catalytic chemical vapor deposition (Cat-CVD). A low-k SiN film, formed at 250 degreesC with a permittivity of 4, showed good Cu barrier properties.