The results of an experimental test of Christov's theory for injected electron current into dielectric or semiconductor materials in amorphous (GeS3)(100-x)Ga-x (x=0, 4, 8, 12 at.%) thin films are reported. The effective electron mass in the conduction band has been calculated. The electron work function at the Al/(Ge-S-Ga) interface and the relative dielectric permittivity of the layers has been determined. Thermal dependence of direct current (DC) conductivity has been investigated and activation energy has been determined.