A simple low-temperature laser-doping process employing phosphosilicate glass (PSG) and borosilicate glass (BSG) films as dopant sources is proposed in order to fabricate the source and drain in polycrystalline silicon thin film transistors (poly-Si TFrs). The sheet resistance and the dopant depth profile have been successfully controlled by the PH3/SiH4 flow ratio, the laser energy density and the number of laser pulses. The sheet resistances of 450 Omega/square for phosphorus doping and 1.1 k Omega/square for boron doping were obtained. The devices fabricated by the proposed laser doping method showed a good ohmic property without any current crowding effect. Our experimental result shows that the proposed laser-doping process which does not require any postannealing is suitable for the source and drain formation of poly-Si TFrs.