We report here on Er doping in the vicinity of ordered arrays of Si nanocrystals. Using a Si/SiO2 superlattice structure allows control of both the size and arrangement of the nanocrystals. Amorphous Si/SiO2, superlattices with 15 periods and an additional 30 nm of top oxide are deposited by RF sputtering and plasma-enhanced chemical vapor deposition (PECVD). Erbium is implanted into the as-prepared samples with a dose ranging from 1 X 10(15) to 5 X 10(16) cm(-2). The superlattices are investigated using wide-angle X-ray scattering, Rutherford backscattering spectroscopy and transmission electron microscopy. It is shown that annealing the implanted samples at 800 degreesC for various times results in a controlled crystallization and in activation of the Er dopand. Damage to the superlattice structure due to the implantation process and the re-distribution of the Er dopand after annealing is discussed. Preliminary luminescence results are shown.