Polycrystalline Cd-Te-In films have been grown on glass substrates by close-spaced vapor transport combined with a free evaporation technique and the stoichiometric, structural and electrical properties were investigated as functions of In2Te3 concentration added in solid solution into the CdTe structure during In incorporation. Indium was introduced by evaporation during film preparation and the incorporation was controlled by the temperature of the In source. The composition of the films was investigated by Auger electron spectroscopy, showing that, when In concentration increases the Cd concentration decreases they have a similar value (approximate to 22 at. %) at about 750 degreesC In source temperature. The dark resistivity decreased monotonically four orders of magnitude with the In2Te3 concentration and reached a minimum point. From the structural characterization employed it was shown that the In atoms are incorporated in two ways: (I) for as low-In concentration, the In atoms substitute the Cd atoms, decreasing the resistivity; and (II) for high-In concentration, the In atoms form with the CdTe a solid solution like (CdTe)(1-x)(In2Te3)(x). The x-ray spectra were calculated for In source temperatures of 550 and 750 degreesC using structure refinement by the Rietveld method and general structure analysis system software. A good agreement between experimental and calculated spectra was found for both temperatures.