The generation of active species for silicon dioxide etch and the formation of passivation layers on Si or photoresist is important for etching contact holes of high aspect ratio in sub-half-micron technology. Some methods use a process gas with high C/F ratio chemistry, such as C4F8, and/or apply a pulsed plasma technique, or radical control by chamber-wall modification. As a simple novel method, enhanced inductively coupled plasma (E-ICP) is expected to control the plasma characteristics by changing its E-ICP frequency; we tested the feasibility of using E-ICP for the process of contact hole etching. Scanning electron microscope images of etched profiles for micropatterns of I and 0.3 mum. are shown to compare to the results by CW-ICP, magnetized-ICP, and E-ICP.