Heteroepitaxial cubic Sic thin films have been deposited on silicon substrates at temperatures in the range of 750-1000 degreesC using single molecular precursors by the metalorganic chemical vapor deposition (CVD) method. Single-crystalline, crack-free, stoichiometric cubic Sic films were successfully grown on both Si(OO I) and Si(I I I) substrates without surface carbonization at as low as temperature of 920 degreesC with 1,3-disilabutane, H3Si-CH2-SiH2-CH3, as a liquid single source precursor which contains silicon and carbon in 1: 1 ratio. Cubic SiC thin films highly oriented in the [001] direction were also obtained on Si(001) using either a liquid mixture of 1,3,5-trisilapentane (TSP), H3Si-CH-SiH2-CH-SiH3. and 2,4,6-trisilaheptane (TSH) at 980 degreesC or 2,6-dimethyl-2,4,6-trisilaheptane (DMTSH), H3C-SiH(CH3)-CH2-SiH2-CH2-SiH(CH3)-CH3 at 950 degreesC without carrier gas. These growth temperatures were much lower than conventional CVD growth temperatures, and this is a report of cubic Sic film growth using the single molecular precursors of trisilaalkanes (i.e., DMTSH and TSP+TSH). The as-grown Sic films were characterized by in situ reflection high-energy electron diffraction and by ex situ x-ray diffraction, transmission electron diffraction, scanning electron microscopy. Auger electron spectroscopy, and Rutherford backscattering spectroscopy