Chemical vapor deposited diamond films (DF) were prepared on p-type Si (100) substrates. The films were doped by 140 keV B+ implantation to doses between 10(14)-6x10(16)cm(-2). Structural changes were studied by scanning electron microscopy and Raman measurements. The DF become more and more seriously disordered versus dose. Surprisingly, the amorphization process is not as rapid as predicted. Secondary ion mass spectroscopy results show that the implanted B atoms have a strong tendency of outdiffusion during annealing. When experimental parameters are suitable, the B atoms' profiles indicate perfect Gaussian-like shape and the electrical resistance of DF can be decreased ten orders of magnitude.