In this article, a thin tensile GaAs interlayer was used to get narrower size distribution and regular arrangement of InAs quantum dots (QDs) on InP substrate by low-pressure metalorganic chemical vapor deposition. The comparison results of thr: photoluminescence spectrum and the atomic force microscopy image show better properties after using GaAs interlayer. Also investigated were the surface behaviors of InAs QDs with different InAs coverage on GaAs/InP in order to reveal the detailed information of InAs QDs.