Journal of Vacuum Science & Technology B, Vol.18, No.6, 2669-2675, 2000
Integrated atomic force microscopy array probe with metal-oxide-semiconductor field effect transistor stress sensor, thermal bimorph actuator, and on-chip complementary metal-oxide-semiconductor electronics
A microfabricated 2x1 array of active and self-detecting cantilevers is presented for applications in atomic force microscopy (AFM). The integrated deflection sensor is based on a stress sensing metal-oxide-semiconductor transistor. Full custom complementary metal-oxide-semiconductor amplifiers for signal readout are combined on the same chip. A sensor sensitivity of 2.25 mV/nm, or a change in current Delta Id/Id = 2.8 x 10(-6)/nm, was obtained at the final output stage. Three Al-Si thermal bimorph actuators are integrated on each cantilever for self-excitation and feedback actuation. The efficiencies of the heaters are 2.4-4.7 K/mW. In the experimental setup, a maximum displacement of 8 mum was achieved at 45 mW input. A pair of parallel AFM images in the constant height mode, a typical tapping mode image, and a constant force image with 1.3 mum high features have been successfully taken with the array probe.