We report on the results of performance evaluation tests of a JEOL model JBX-9300FS electron-beam nanolithography system operating at 100 kV. The system was tested in the areas of lithographic resolution, stability, exposure uniformity, and pattern placement accuracy. A minimum spot size of 4 nm was measured at a current of 100 pA. The spot remained below 6.5 nm for beam currents up to 8 nA. Maximum digital to analog converter linearity and deflection amplifier errors were below 0.5 nm. Pattern placement accuracy in a 50 mm square area was found to be within +/-16 nm and inside the 500 mum writing field within +/-7 nm.