A method for real-time backscatter correction has been implemented in a 50 keV raster-scan electron-beam mask exposure system. The real-time nature of the correction makes it an attractive, user transparent feature with flexibility to choose the correction algorithm and scattering parameters. This article describes the correction algorithms and the hardware added to the data path. We compare simulated critical dimension (CD) linearity with results from mask exposures in our new raster shaped beam proof-of-concept tool. Performance meets both throughput and CD linearity requirements for the 130 and 100 nm device generations.