Dry etch behavior of CoNbZr in an inductively coupled plasma of Cl-2/BCl3 at elevated temperatures has been studied. Etch behavior of the alloy is ion induced with a strong chemical enhancement. The etch rate shows nonstoichiometric behavior when compared with the constituting elements. The increase by about 35% is attributed to interactive effects. A further enhancement up to about 40% is obtained under simultaneous exposure of deep ultraviolet irradiation. A fast anisotropic dry patterning process for CoNbZr has been developed, with etch rates up to 300 nm/min at 220 degreesC.