The SiC sharp-emitter field-emission arrays have been produced by a transfer-mold technique. An alternate method of microwave-enhanced wet anisotropic silicon etching has been applied to the fabrication of field-emission arrays. Supporting, back side (100)-oriented, 380 mum thick silicon substrate has been etched away six times faster as compared to the thermally activated, standard KOH etching process. The alternate etching method may be successfully applied to any existing transfer-mold fabrication procedures.