We proposed a method for the formation of an aluminum parting layer in the fabrication of field emitter arrays, in which we used a reflow property of aluminum at a lower temperature than the softening point of glass. In contrast to a conventional Spindt-type method, an aluminum layer was successively deposited on gate metal/dielectric layers by the usual sputter method and all the layers including the aluminum layer were etched together for the formation of gate holes. By a rapid thermal annealing process, the aluminum slightly diffused into the gate hole. This reflowed aluminum was used as a parting layer and emitter arrays were easily fabricated.