Gated pyramid-shaped polycrystalline diamond field emitter arrays (FEAs) were, fabricated;by microwave plasma chemical vapor deposition and the transfer mold technique. The FEAs were fabricated with various standard integrated circuit technologies and micromachine electromechanical system technologies; thermal:oxidation, chemical wet etch, sputtering, and glass-to-metal bonding technique by using anisotropic conductive film (ACF). As a result of ACF bonding, thin flat film type FEAs were simply realized on an indium tin oxide coated glass substrate without the necessity of an additional cathode contact. Fabricated diamond FEAs were electrically characterized in triode configuration and an anode current of 237 nA was obtained at the gate bias of 120 V.