We investigated the effects of recovery schemes on the characteristics of GaN Schottky diodes damaged by inductively coupled Cl-2/H-2/Ar/CH4 plasma etching. The recovery schemes included N-2 plasma exposure, N-2 plasma plus annealing at 600 degreesC in N-2, and annealing at 700 degreesC in N-2 Ga-deficient GaN surface lavers were observed after etching the GaN, and the Ga/N stoichiometry at the surface was most strongly affected by the Cl-2 flow rate among the process variables. The samples annealed at 700 degreesC showed a clear improvement in diode characteristics and a complete restoration of the Ga/N ratio from ca. 0.87 to ca. 1.0 at the surface lavers, as measured by Auger electron spectroscopy. For all other damage-recovery schemes, the samples showed no significant enhancement in diode characteristics and incomplete restoration of Ga/N stoichiometry at the surface lavers.