Thin films of self-organizing diblock copolymers may be suitable for semiconductor applications since they enable patterning of ordered domains with dimensions below photolithographic resolution over wafer-scale areas. We investigate the process window for forming ordered arrays of nanoscale polymer domains in thin films across 8-in.-diam silicon wafers, including the effect of substrate material and surface treatment, annealing conditions, copolymer molecular weight, and film thickness. We also demonstrate pattern transfer of the nanoporous polymer template using both reactive ion etching and metal lift off.