Growth temperature dependence of donor-acceptor layered structure FET

Fukagawa T; Iizuka M; Kuniyoshi S; Kudo K; Tanaka K

Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals, Vol.349, 371-374, 2000

DOI10.1080/10587250008024941 Export Citation

Growth temperature dependence of donor-acceptor layered structure FET

Fukagawa T, Iizuka M, Kuniyoshi S, Kudo K, Tanaka K

We have Fabricated field-effect transistors (FETs) using a TMTSF (donor) and TCNQ (acceptor) layered structure and investigated the basic FET characteristics. The transconductances of FETs depended on the substrate temperature.

Keywords:charge transfer complex;layered structure FET;transconductance;substrate temperature