Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals, Vol.371, 397-402, 2001
Residual stress behavior in methylsilsesquioxane-based dielectric thin films
Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by Xray diffraction.
Keywords:methylsilsesquioxane;thin film;low dielectric;residual stress;thermal stress;refractive index;crack;craze;X-ray diffraction