Tin nitride is a relatively unknown compound. In this study, the tin nitride thin film is examined as a negative electrode for a thin-film microbattery. Reactive rf magnetron sputtering is used for deposition of films with varying deposition temperature. The charge-discharge properties of thin films deposited at room temperature, 100 and 200 degreesC are found to be satisfactory. As the irreversible capacity fraction increases, rechargeability is improved. Finally, it is suggested that the electrochemical characteristics of tin nitride are similar to those of the tin oxide system. The charge-discharge characteristics are investigated in several ways.