Copper-metallized silicon wafers were used as substrates for the deposition of zinc oxide thin films using a radio frequency sputter deposition technique. Copper metallization on silicon wafer was performed using two different methods, a plating technique and a sputter deposition technique. Copper-metallized silicon substrates were then deposited with zinc oxide thin films under various sputter deposition conditions. The characteristics of zinc oxide thin films were found to not only depend on the deposition conditions, but also be strongly influenced by the type and characteristics of the copper layers. In addition to polycrystalline thin-film zinc oxide, single-crystal zinc oxide whiskers were also found on silicon substrates with plated copper.