Journal of Materials Science, Vol.37, No.2, 365-368, 2002
Growth mechanism of chemical solution derived PZT films on MgO(100) substrate
PZT (Zr : Ti = 0.53 : 0.47) thin films were fabricated by chemical solution deposition with metal naphthenates used as starting materials. Effect of final annealing temperature on epitaxy and surface morphology of the films were investigated. PZT films prefired at 200degreesC were crystallized to be highly (00l)/(h00)-oriented at final annealing temperatures of 750degrees-800degreesC. The film annealed at 750degreesC was smooth and no distinct texture was exhibited, while the rosette-type microstructure caused by lead volatilization was observed in the films after annealing at 800degreesC.