Amorphous-Si/SiO2 superlattices have been grown using the two-target alternation magnetron sputtering technique. The thickness of the SiO2 layers in all the superlattices was 2.0 nm and that of the Si layers in nine types of the superlattice ranged from 0.6 to 3.8 nm in steps of 0.4 nm. Visible electroluminescence (EL) spectra of Au/amorphous-Si/SiO2 superlattices/p-Si structures with Si layers of nine different thicknesses showed a peak located at 650 nm. After gamma irradiation, the EL peak increased 2.5 times in intensity. Moreover, a strong new 470 nm blue peak emerged from the EL spectra in all the Au/amorphousSi/SiO2 superlattices/p-Si structures. The experimental results indicate that the EL recombination process mainly originates from luminescence centers in the SiO2 layers rather than from the Si layers in the superlattices.