A technique using low energy x-ray emission spectroscopy (LEXES) is used to determine the dose of shallow implanted dopants. This technique is nondestructive and dopant selective. This technique can provide absolute dose values. CAMECA has developed specific instrumentation called the shallow probe which adapts the LEXES technique to the requirements of the semiconductor industry in terms of sensitivity and reproducibility of dose measurements. This work reports the performance of the shallow probe applied to a wide variety of boron, phosphorus, and arsenic implants into silicon wafers. Measured doses are compared to both ultralow energy secondary ion mass spectrometry and implanter tool values.