The most critical parameter for deep submicron metal-oxide-semiconductor (MOS) field effect transistors (MOSFETs) is the threshold voltage (V-T). The device V-T is highly dependent on processing; specifically, the ion implanted channel-doping profile. Monitoring the channel doping on product wafers is highly desirable and is a major issue for process engineers. A technique based on a noncontaminating, nondamaging, small diameter metal contact is described for highly sensitive and precise measurements of the channel carrier density profile, dose and V-T on product wafers.