Thin film crystalline Si solar cells on cheap Si-based substrates have a large potential in PV technology. Optical light confinement is a very crucial point of such thin film structures. Porous Si (PS) as a perfect light diffuser could be used as a backside reflector if its multi-layer structure would be preserved during the deposition of a thin Si film. That is why low-energy plasma enhanced chemical vapor deposition (LEPECVD) was chosen to deposit a thin Si film on a PS multilayer structure at low temperature and high deposition rate. This technique allows one to deposit a Si film with epitaxial quality on the top of PS without destroying its multi-layer structure as revealed by high-resolution X-ray diffraction and cross-sectional transmission electron microscopy (TEM). The epi-layers of 10 mum are grown at very high deposition rates (approx. 3 nm/s) at 590degreesC. TEM-analysis reveals that during the deposition a high density of defects forms at the PS/epi-Si inter-face and spreads through the whole epi-layer. The defect density is decreased when the deposition temperature is increased to 645degreesC. LEPECVD appears to be an appropriate deposition technique to grow thin Si films on cheap Si based substrates with PS reflector.