The electronic properties of low temperature (150 degreesC) deposited hydrogenated polymorphous silicon thin films are studied in both coplanar and sandwich configurations using a number of complementary characterisation techniques. It is shown that these films have essentially enhanced transport properties for the holes and lower deep defect densities than standard hydrogenated amorphous silicon. From the photovoltaic point of view. this leads to a better normalised collection efficiency in the red part of the spectrum in Schottky diodes made of these films due to a lower recombination rate and a wider electric field distribution. The influence of light-soaking and subsequent annealing are described.