The growth of polycrystalline silicon on glass by laser-assisted chemical vapor deposition has been studied with the aim of identifying a light absorber layer for solar cells, with superior material quality compared to other technologies available for low-temperature substrates. One-dimensional calculations of the thermal wave produced by laser irradiation have been used to elucidate the complex interaction of the molten silicon surface layer with the substrate during the growth. The experiments show the relevant role played by the seed layer used as the growth initiator. The morphology of the laser-crystallized films has been analysed by scanning electron microscopy and X-ray diffraction. Polysilicon films, 2 mum thick, with a compact structure consisting of 1-2-mum grains that are almost monocrystalline, have been obtained.