In this paper we present the copper indium disulfide thin films production technology by spraying with further pyrolysis, and the results of the investigation of X-ray. kinetic and optical properties of manufactured films at 300 K. It was shown that the conductivity type and specific resistance values depend on chemical elements that dominate in the solution (indium or copper).The band gap value for CuInS2 films, measured by absorption spectra analysis was within the range of 1.3-1.5 eV, depending on molar composition of components, temperature and type of substrate. It was shown that if the anisotropy and non-parabolicity of the hole dispersion law in D-2d(12) crystals are left without consideration, it will lead to significant errors in determination of semiconductor material parameters with chalcopyrite structure.