The optoelectronic properties of microcrystalline silicon (muc-Si) films were determined by contactless transient photoconductivity measurements in the microwave frequency range. High mobilities were observed in muc-Si produced by laser annealing although the material contains impurities diffused from the substrate and is doped. Hot wire and plasma enhanced chemical vapor deposited (PECVD) muc-Si films are characterized in the best case by mobilities in the order of magnitude of the mobility in a-Si:H. C