Homogeneous and crack-free Bi2Ti2O7 thin films with strong (111) orientation were successfully prepared on n-type Si (100) substrates by chemical solution deposition. Bismuth nitrate and titanium butoxide were used as starting materials. The crystallization temperature is relatively low and about 500 degreesC. The insulating and dielectric properties were found to be dependent on the annealing temperature. The dielectric constant was 115.5 at 100 kHz at room temperature, and the leakage current density was 3.48 X 10(-7) A/cm(2) at an applied voltage of 15 V (375 kV/cm) for 0.4 mum-thick films annealed at 500 degreesC for 30 min.